Investigation of n-type GaN deposited on sapphire substrate with different small misorientations

Xing Yan-Hui; Deng Jun; Han Jun; Li Jian-Jun; Shen Guang-Di

doi:10.7498/aps.58.2644

Search

x

Xing Yan-Hui, Deng Jun, Han Jun, Li Jian-Jun, Shen Guang-Di. Investigation of n-type GaN deposited on sapphire substrate with different small misorientationsJ. Acta Physica Sinica, 2009, 58(4): 2644-2648. DOI: 10.7498/aps.58.2644

Citation:

Xing Yan-Hui, Deng Jun, Han Jun, Li Jian-Jun, Shen Guang-Di. Investigation of n-type GaN deposited on sapphire substrate with different small misorientationsJ. Acta Physica Sinica, 2009, 58(4): 2644-2648. DOI: 10.7498/aps.58.2644

Citation:

Xing Yan-Hui, Deng Jun, Han Jun, Li Jian-Jun, Shen Guang-Di. Investigation of n-type GaN deposited on sapphire substrate with different small misorientationsJ. Acta Physica Sinica, 2009, 58(4): 2644-2648. DOI: 10.7498/aps.58.2644