Search

x
中国物理学会期刊
Advanced Search
Li Qi, Zhang Bo, Li Zhao-Ji. A new partial SOI high voltage device with double-faced step buried oxide structureJ. Acta Physica Sinica, 2008, 57(10): 6565-6570. DOI: 10.7498/aps.57.6565
Citation: Li Qi, Zhang Bo, Li Zhao-Ji. A new partial SOI high voltage device with double-faced step buried oxide structureJ. Acta Physica Sinica, 2008, 57(10): 6565-6570. DOI: 10.7498/aps.57.6565
shu

A new partial SOI high voltage device with double-faced step buried oxide structure

Acta Phys. Sin., 2008, 57(10): 6565-6570.
DOI: 10.7498/aps.57.6565
CSTR: 32037.14.aps.57.6565
PDF
Get Citation

  • Abstract

    Authors and contacts

    References

Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return
    Baidu
    map