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中国物理学会期刊
Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang. Fabrication and I-V characteristics of ZnO nanowire-based field effect transistorsJ. Acta Physica Sinica, 2008, 57(9): 5887-5892. DOI: 10.7498/aps.57.5887
Citation: Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang. Fabrication and I-V characteristics of ZnO nanowire-based field effect transistorsJ. Acta Physica Sinica, 2008, 57(9): 5887-5892. DOI: 10.7498/aps.57.5887

    Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors

    CSTR: 32037.14.aps.57.5887
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