Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cells

Han Xiao-Yan; Hou Guo-Fu; Li Gui-Jun; Zhang Xiao-Dan; Yuan Yu-Jie; Zhang De-Kun; Chen Xin-Liang; Wei Chang-Chun; Sun Jian; Geng Xin-Hua

doi:10.7498/aps.57.5284

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Han Xiao-Yan, Hou Guo-Fu, Li Gui-Jun, Zhang Xiao-Dan, Yuan Yu-Jie, Zhang De-Kun, Chen Xin-Liang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua. Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cellsJ. Acta Physica Sinica, 2008, 57(8): 5284-5289. DOI: 10.7498/aps.57.5284

Citation:

Han Xiao-Yan, Hou Guo-Fu, Li Gui-Jun, Zhang Xiao-Dan, Yuan Yu-Jie, Zhang De-Kun, Chen Xin-Liang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua. Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cellsJ. Acta Physica Sinica, 2008, 57(8): 5284-5289. DOI: 10.7498/aps.57.5284

Citation:

Han Xiao-Yan, Hou Guo-Fu, Li Gui-Jun, Zhang Xiao-Dan, Yuan Yu-Jie, Zhang De-Kun, Chen Xin-Liang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua. Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cellsJ. Acta Physica Sinica, 2008, 57(8): 5284-5289. DOI: 10.7498/aps.57.5284