Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noiseJ. Acta Physica Sinica, 2008, 57(8): 5205-5211. DOI: 10.7498/aps.57.5205
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Citation:
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Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noiseJ. Acta Physica Sinica, 2008, 57(8): 5205-5211. DOI: 10.7498/aps.57.5205
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Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noiseJ. Acta Physica Sinica, 2008, 57(8): 5205-5211. DOI: 10.7498/aps.57.5205
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Citation:
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Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noiseJ. Acta Physica Sinica, 2008, 57(8): 5205-5211. DOI: 10.7498/aps.57.5205
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