Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors

Zhou Mei; Zhao De-Gang

doi:10.7498/aps.57.4570

Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectorsJ. Acta Physica Sinica, 2008, 57(7): 4570-4574. DOI: 10.7498/aps.57.4570

Citation:

Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectorsJ. Acta Physica Sinica, 2008, 57(7): 4570-4574. DOI: 10.7498/aps.57.4570

Citation:

Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectorsJ. Acta Physica Sinica, 2008, 57(7): 4570-4574. DOI: 10.7498/aps.57.4570