Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors

Wang Jun; Wang Lei; Dong Ye-Min; Zou Xin; Shao Li; Li Wen-Jun; Steve Yang

doi:10.7498/aps.57.4492

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Wang Jun, Wang Lei, Dong Ye-Min, Zou Xin, Shao Li, Li Wen-Jun, Steve Yang. Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistorsJ. Acta Physica Sinica, 2008, 57(7): 4492-4496. DOI: 10.7498/aps.57.4492

Citation:

Wang Jun, Wang Lei, Dong Ye-Min, Zou Xin, Shao Li, Li Wen-Jun, Steve Yang. Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistorsJ. Acta Physica Sinica, 2008, 57(7): 4492-4496. DOI: 10.7498/aps.57.4492

Citation:

Wang Jun, Wang Lei, Dong Ye-Min, Zou Xin, Shao Li, Li Wen-Jun, Steve Yang. Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistorsJ. Acta Physica Sinica, 2008, 57(7): 4492-4496. DOI: 10.7498/aps.57.4492