Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing

Lin Ruo-Bing; Wang Xin-Juan; Feng Qian; Wang Chong; Zhang Jin-Cheng; Hao Yue

doi:10.7498/aps.57.4487

Search

x

Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealingJ. Acta Physica Sinica, 2008, 57(7): 4487-4491. DOI: 10.7498/aps.57.4487

Citation:

Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealingJ. Acta Physica Sinica, 2008, 57(7): 4487-4491. DOI: 10.7498/aps.57.4487

Citation:

Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealingJ. Acta Physica Sinica, 2008, 57(7): 4487-4491. DOI: 10.7498/aps.57.4487