Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong, Wang Jin. The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFETJ. Acta Physica Sinica, 2008, 57(7): 4476-4481. DOI: 10.7498/aps.57.4476
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Citation:
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong, Wang Jin. The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFETJ. Acta Physica Sinica, 2008, 57(7): 4476-4481. DOI: 10.7498/aps.57.4476
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong, Wang Jin. The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFETJ. Acta Physica Sinica, 2008, 57(7): 4476-4481. DOI: 10.7498/aps.57.4476
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Citation:
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong, Wang Jin. The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFETJ. Acta Physica Sinica, 2008, 57(7): 4476-4481. DOI: 10.7498/aps.57.4476
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