Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Guo Hui, Luan Su-Zhen. The relation between green-band luminescence of 4H-SiC homoepitaxial layer and defectsJ. Acta Physica Sinica, 2008, 57(7): 4456-4458. DOI: 10.7498/aps.57.4456
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Citation:
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Guo Hui, Luan Su-Zhen. The relation between green-band luminescence of 4H-SiC homoepitaxial layer and defectsJ. Acta Physica Sinica, 2008, 57(7): 4456-4458. DOI: 10.7498/aps.57.4456
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Guo Hui, Luan Su-Zhen. The relation between green-band luminescence of 4H-SiC homoepitaxial layer and defectsJ. Acta Physica Sinica, 2008, 57(7): 4456-4458. DOI: 10.7498/aps.57.4456
|
Citation:
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Guo Hui, Luan Su-Zhen. The relation between green-band luminescence of 4H-SiC homoepitaxial layer and defectsJ. Acta Physica Sinica, 2008, 57(7): 4456-4458. DOI: 10.7498/aps.57.4456
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