Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao. Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbandsJ. Acta Physica Sinica, 2008, 57(4): 2481-2485. DOI: 10.7498/aps.57.2481
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Citation:
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao. Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbandsJ. Acta Physica Sinica, 2008, 57(4): 2481-2485. DOI: 10.7498/aps.57.2481
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao. Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbandsJ. Acta Physica Sinica, 2008, 57(4): 2481-2485. DOI: 10.7498/aps.57.2481
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Citation:
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao. Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbandsJ. Acta Physica Sinica, 2008, 57(4): 2481-2485. DOI: 10.7498/aps.57.2481
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