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中国物理学会期刊
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Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng. Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistorJ. Acta Physica Sinica, 2008, 57(4): 2456-2461. DOI: 10.7498/aps.57.2456
Citation: Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng. Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistorJ. Acta Physica Sinica, 2008, 57(4): 2456-2461. DOI: 10.7498/aps.57.2456
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Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor

Acta Phys. Sin., 2008, 57(4): 2456-2461.
DOI: 10.7498/aps.57.2456
CSTR: 32037.14.aps.57.2456
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