Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model

Li Ruo-Fan; Yang Rui-Xia; Wu Yi-Bin; Zhang Zhi-Guo; Xu Na-Ying; Ma Yong-Qiang

doi:10.7498/aps.57.2450

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Li Ruo-Fan, Yang Rui-Xia, Wu Yi-Bin, Zhang Zhi-Guo, Xu Na-Ying, Ma Yong-Qiang. Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization modelJ. Acta Physica Sinica, 2008, 57(4): 2450-2455. DOI: 10.7498/aps.57.2450

Citation:

Li Ruo-Fan, Yang Rui-Xia, Wu Yi-Bin, Zhang Zhi-Guo, Xu Na-Ying, Ma Yong-Qiang. Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization modelJ. Acta Physica Sinica, 2008, 57(4): 2450-2455. DOI: 10.7498/aps.57.2450

Citation:

Li Ruo-Fan, Yang Rui-Xia, Wu Yi-Bin, Zhang Zhi-Guo, Xu Na-Ying, Ma Yong-Qiang. Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization modelJ. Acta Physica Sinica, 2008, 57(4): 2450-2455. DOI: 10.7498/aps.57.2450