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Lei Shuang-Ying, Shen Bo, Zhang Guo-Yi. Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitionsJ. Acta Physica Sinica, 2008, 57(4): 2386-2391. DOI: 10.7498/aps.57.2386
Citation: Lei Shuang-Ying, Shen Bo, Zhang Guo-Yi. Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitionsJ. Acta Physica Sinica, 2008, 57(4): 2386-2391. DOI: 10.7498/aps.57.2386
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Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Acta Phys. Sin., 2008, 57(4): 2386-2391.
DOI: 10.7498/aps.57.2386
CSTR: 32037.14.aps.57.2386
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