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中国物理学会期刊
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Feng Qian, Hao Yue, Yue Yuan-Zheng. Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating filmJ. Acta Physica Sinica, 2008, 57(3): 1886-1890. DOI: 10.7498/aps.57.1886
Citation: Feng Qian, Hao Yue, Yue Yuan-Zheng. Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating filmJ. Acta Physica Sinica, 2008, 57(3): 1886-1890. DOI: 10.7498/aps.57.1886
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Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film

Acta Phys. Sin., 2008, 57(3): 1886-1890.
DOI: 10.7498/aps.57.1886
CSTR: 32037.14.aps.57.1886
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