Study of conductive property for a N-VDMOS interface trap under X-ray radiation

Sun Guang-Ai; Hu Gang-Yi; Yang Mo-Hua; Xu Shi-Liu; Zhang Zheng-Fan; Liu Yu-Kui; He Kai-Quan; Zhong Yi

doi:10.7498/aps.57.1872

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Sun Guang-Ai, Hu Gang-Yi, Yang Mo-Hua, Xu Shi-Liu, Zhang Zheng-Fan, Liu Yu-Kui, He Kai-Quan, Zhong Yi. Study of conductive property for a N-VDMOS interface trap under X-ray radiationJ. Acta Physica Sinica, 2008, 57(3): 1872-1877. DOI: 10.7498/aps.57.1872

Citation:

Sun Guang-Ai, Hu Gang-Yi, Yang Mo-Hua, Xu Shi-Liu, Zhang Zheng-Fan, Liu Yu-Kui, He Kai-Quan, Zhong Yi. Study of conductive property for a N-VDMOS interface trap under X-ray radiationJ. Acta Physica Sinica, 2008, 57(3): 1872-1877. DOI: 10.7498/aps.57.1872

Citation:

Sun Guang-Ai, Hu Gang-Yi, Yang Mo-Hua, Xu Shi-Liu, Zhang Zheng-Fan, Liu Yu-Kui, He Kai-Quan, Zhong Yi. Study of conductive property for a N-VDMOS interface trap under X-ray radiationJ. Acta Physica Sinica, 2008, 57(3): 1872-1877. DOI: 10.7498/aps.57.1872