Investigating the effect of doping amorphous silicon nitride on retention characteristics of SONOS device by DFT calculation

Fang Shao-Hua; Cheng Xiu-Lan; Huang Ye; Gu Huai-Huai

doi:10.7498/aps.56.6634

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Fang Shao-Hua, Cheng Xiu-Lan, Huang Ye, Gu Huai-Huai. Investigating the effect of doping amorphous silicon nitride on retention characteristics of SONOS device by DFT calculationJ. Acta Physica Sinica, 2007, 56(11): 6634-6641. DOI: 10.7498/aps.56.6634

Citation:

Fang Shao-Hua, Cheng Xiu-Lan, Huang Ye, Gu Huai-Huai. Investigating the effect of doping amorphous silicon nitride on retention characteristics of SONOS device by DFT calculationJ. Acta Physica Sinica, 2007, 56(11): 6634-6641. DOI: 10.7498/aps.56.6634

Citation:

Fang Shao-Hua, Cheng Xiu-Lan, Huang Ye, Gu Huai-Huai. Investigating the effect of doping amorphous silicon nitride on retention characteristics of SONOS device by DFT calculationJ. Acta Physica Sinica, 2007, 56(11): 6634-6641. DOI: 10.7498/aps.56.6634