Infrared absorption of VO2 based Mott transition field effect transistor dependent on optical phonon in α-SiN: H films

Chen Chang-Hong; Huang De-Xiu; Zhu Peng

doi:10.7498/aps.56.5221

Search

x

Chen Chang-Hong, Huang De-Xiu, Zhu Peng. Infrared absorption of VO2 based Mott transition field effect transistor dependent on optical phonon in α-SiN: H filmsJ. Acta Physica Sinica, 2007, 56(9): 5221-5226. DOI: 10.7498/aps.56.5221

Citation:

Chen Chang-Hong, Huang De-Xiu, Zhu Peng. Infrared absorption of VO2 based Mott transition field effect transistor dependent on optical phonon in α-SiN: H filmsJ. Acta Physica Sinica, 2007, 56(9): 5221-5226. DOI: 10.7498/aps.56.5221

Citation:

Chen Chang-Hong, Huang De-Xiu, Zhu Peng. Infrared absorption of VO2 based Mott transition field effect transistor dependent on optical phonon in α-SiN: H filmsJ. Acta Physica Sinica, 2007, 56(9): 5221-5226. DOI: 10.7498/aps.56.5221