Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chicknessJ. Acta Physica Sinica, 2007, 56(8): 4955-4959. DOI: 10.7498/aps.56.4955
|
Citation:
|
Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chicknessJ. Acta Physica Sinica, 2007, 56(8): 4955-4959. DOI: 10.7498/aps.56.4955
|
Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chicknessJ. Acta Physica Sinica, 2007, 56(8): 4955-4959. DOI: 10.7498/aps.56.4955
|
Citation:
|
Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chicknessJ. Acta Physica Sinica, 2007, 56(8): 4955-4959. DOI: 10.7498/aps.56.4955
|
DownLoad: