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中国物理学会期刊
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Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantationJ. Acta Physica Sinica, 2007, 56(8): 4930-4935. DOI: 10.7498/aps.56.4930
Citation: Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantationJ. Acta Physica Sinica, 2007, 56(8): 4930-4935. DOI: 10.7498/aps.56.4930
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Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation

Acta Phys. Sin., 2007, 56(8): 4930-4935.
DOI: 10.7498/aps.56.4930
CSTR: 32037.14.aps.56.4930
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