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中国物理学会期刊
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Cai Cheng-Yu, Zhou Wang-Min. The strain distribution and equilibrium morphology of Ge/Si semiconductor quantum dotJ. Acta Physica Sinica, 2007, 56(8): 4841-4846. DOI: 10.7498/aps.56.4841
Citation: Cai Cheng-Yu, Zhou Wang-Min. The strain distribution and equilibrium morphology of Ge/Si semiconductor quantum dotJ. Acta Physica Sinica, 2007, 56(8): 4841-4846. DOI: 10.7498/aps.56.4841
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The strain distribution and equilibrium morphology of Ge/Si semiconductor quantum dot

Acta Phys. Sin., 2007, 56(8): 4841-4846.
DOI: 10.7498/aps.56.4841
CSTR: 32037.14.aps.56.4841
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