Research of the Ga and Al double-impurity doping technique for making fast switching thyristor

Wang Gong-Tang; Liu Xiu-Xi

doi:10.7498/aps.56.4823

Wang Gong-Tang, Liu Xiu-Xi. Research of the Ga and Al double-impurity doping technique for making fast switching thyristorJ. Acta Physica Sinica, 2007, 56(8): 4823-4828. DOI: 10.7498/aps.56.4823

Citation:

Wang Gong-Tang, Liu Xiu-Xi. Research of the Ga and Al double-impurity doping technique for making fast switching thyristorJ. Acta Physica Sinica, 2007, 56(8): 4823-4828. DOI: 10.7498/aps.56.4823

Citation:

Wang Gong-Tang, Liu Xiu-Xi. Research of the Ga and Al double-impurity doping technique for making fast switching thyristorJ. Acta Physica Sinica, 2007, 56(8): 4823-4828. DOI: 10.7498/aps.56.4823