Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET

Zhang He-Ming; Cui Xiao-Ying; Hu Hui-Yong; Dai Xian-Ying; Xuan Rong-Xi

doi:10.7498/aps.56.3504

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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFETJ. Acta Physica Sinica, 2007, 56(6): 3504-3508. DOI: 10.7498/aps.56.3504

Citation:

Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFETJ. Acta Physica Sinica, 2007, 56(6): 3504-3508. DOI: 10.7498/aps.56.3504

Citation:

Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFETJ. Acta Physica Sinica, 2007, 56(6): 3504-3508. DOI: 10.7498/aps.56.3504