Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffractionJ. Acta Physica Sinica, 2007, 56(6): 3350-3354. DOI: 10.7498/aps.56.3350
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Citation:
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Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffractionJ. Acta Physica Sinica, 2007, 56(6): 3350-3354. DOI: 10.7498/aps.56.3350
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Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffractionJ. Acta Physica Sinica, 2007, 56(6): 3350-3354. DOI: 10.7498/aps.56.3350
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Citation:
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Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffractionJ. Acta Physica Sinica, 2007, 56(6): 3350-3354. DOI: 10.7498/aps.56.3350
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