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中国物理学会期刊
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Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Mathematical model of DC characteristic of SiGe charge injection transistorsJ. Acta Physica Sinica, 2007, 56(2): 1105-1109. DOI: 10.7498/aps.56.1105
Citation: Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Mathematical model of DC characteristic of SiGe charge injection transistorsJ. Acta Physica Sinica, 2007, 56(2): 1105-1109. DOI: 10.7498/aps.56.1105
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Mathematical model of DC characteristic of SiGe charge injection transistors

Acta Phys. Sin., 2007, 56(2): 1105-1109.
DOI: 10.7498/aps.56.1105
CSTR: 32037.14.aps.56.1105
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