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中国物理学会期刊
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Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju. The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stressJ. Acta Physica Sinica, 2006, 55(11): 6118-6122. DOI: 10.7498/aps.55.6118
Citation: Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju. The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stressJ. Acta Physica Sinica, 2006, 55(11): 6118-6122. DOI: 10.7498/aps.55.6118
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The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress

Acta Phys. Sin., 2006, 55(11): 6118-6122.
DOI: 10.7498/aps.55.6118
CSTR: 32037.14.aps.55.6118
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