Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4

Qi Jing; Jin Jing; Hu Hai-Long; Gao Ping-Qi; Yuan Bao-He; He De-Yan

doi:10.7498/aps.55.5959

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Qi Jing, Jin Jing, Hu Hai-Long, Gao Ping-Qi, Yuan Bao-He, He De-Yan. Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4J. Acta Physica Sinica, 2006, 55(11): 5959-5963. DOI: 10.7498/aps.55.5959

Citation:

Qi Jing, Jin Jing, Hu Hai-Long, Gao Ping-Qi, Yuan Bao-He, He De-Yan. Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4J. Acta Physica Sinica, 2006, 55(11): 5959-5963. DOI: 10.7498/aps.55.5959

Citation:

Qi Jing, Jin Jing, Hu Hai-Long, Gao Ping-Qi, Yuan Bao-He, He De-Yan. Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4J. Acta Physica Sinica, 2006, 55(11): 5959-5963. DOI: 10.7498/aps.55.5959