Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field

Liu Yu-Min; Yu Zhong-Yuan; Yang Hong-Bo; Huang Yong-Zhen

doi:10.7498/aps.55.5023

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Liu Yu-Min, Yu Zhong-Yuan, Yang Hong-Bo, Huang Yong-Zhen. Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain fieldJ. Acta Physica Sinica, 2006, 55(10): 5023-5029. DOI: 10.7498/aps.55.5023

Citation:

Liu Yu-Min, Yu Zhong-Yuan, Yang Hong-Bo, Huang Yong-Zhen. Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain fieldJ. Acta Physica Sinica, 2006, 55(10): 5023-5029. DOI: 10.7498/aps.55.5023

Citation:

Liu Yu-Min, Yu Zhong-Yuan, Yang Hong-Bo, Huang Yong-Zhen. Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain fieldJ. Acta Physica Sinica, 2006, 55(10): 5023-5029. DOI: 10.7498/aps.55.5023