Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Li Tong, Xing Yan-Hui, Han Jun, Guo Xia, Shen Guang-Di. Investigation of high hole concentration Mg-doped InGaN epilayerJ. Acta Physica Sinica, 2006, 55(9): 4951-4955. DOI: 10.7498/aps.55.4951
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Citation:
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Li Tong, Xing Yan-Hui, Han Jun, Guo Xia, Shen Guang-Di. Investigation of high hole concentration Mg-doped InGaN epilayerJ. Acta Physica Sinica, 2006, 55(9): 4951-4955. DOI: 10.7498/aps.55.4951
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Li Tong, Xing Yan-Hui, Han Jun, Guo Xia, Shen Guang-Di. Investigation of high hole concentration Mg-doped InGaN epilayerJ. Acta Physica Sinica, 2006, 55(9): 4951-4955. DOI: 10.7498/aps.55.4951
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Citation:
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Li Tong, Xing Yan-Hui, Han Jun, Guo Xia, Shen Guang-Di. Investigation of high hole concentration Mg-doped InGaN epilayerJ. Acta Physica Sinica, 2006, 55(9): 4951-4955. DOI: 10.7498/aps.55.4951
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