Lai Yun-Feng, Feng Jie, Qiao Bao-Wei, Ling Yun, Lin Yin-Yin, Tang Ting-Ao, Cai Bing-Chu, Chen Bang-Ming. Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memoryJ. Acta Physica Sinica, 2006, 55(8): 4347-4352. DOI: 10.7498/aps.55.4347
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Citation:
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Lai Yun-Feng, Feng Jie, Qiao Bao-Wei, Ling Yun, Lin Yin-Yin, Tang Ting-Ao, Cai Bing-Chu, Chen Bang-Ming. Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memoryJ. Acta Physica Sinica, 2006, 55(8): 4347-4352. DOI: 10.7498/aps.55.4347
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Lai Yun-Feng, Feng Jie, Qiao Bao-Wei, Ling Yun, Lin Yin-Yin, Tang Ting-Ao, Cai Bing-Chu, Chen Bang-Ming. Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memoryJ. Acta Physica Sinica, 2006, 55(8): 4347-4352. DOI: 10.7498/aps.55.4347
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Citation:
|
Lai Yun-Feng, Feng Jie, Qiao Bao-Wei, Ling Yun, Lin Yin-Yin, Tang Ting-Ao, Cai Bing-Chu, Chen Bang-Ming. Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memoryJ. Acta Physica Sinica, 2006, 55(8): 4347-4352. DOI: 10.7498/aps.55.4347
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