Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition

Qin Qi; Yu Nai-Sen; Guo Li-Wei; Wang Yang; Zhu Xue-Liang; Chen Hong; Zhou Jun-Ming

doi:10.7498/aps.54.5450

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Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx depositionJ. Acta Physica Sinica, 2005, 54(11): 5450-5454. DOI: 10.7498/aps.54.5450

Citation:

Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx depositionJ. Acta Physica Sinica, 2005, 54(11): 5450-5454. DOI: 10.7498/aps.54.5450

Citation:

Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx depositionJ. Acta Physica Sinica, 2005, 54(11): 5450-5454. DOI: 10.7498/aps.54.5450