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中国物理学会期刊
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Lao Yan-Feng, Wu Hui-Zhen. Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structuresJ. Acta Physica Sinica, 2005, 54(9): 4334-4339. DOI: 10.7498/aps.54.4334
Citation: Lao Yan-Feng, Wu Hui-Zhen. Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structuresJ. Acta Physica Sinica, 2005, 54(9): 4334-4339. DOI: 10.7498/aps.54.4334
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Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures

Acta Phys. Sin., 2005, 54(9): 4334-4339.
DOI: 10.7498/aps.54.4334
CSTR: 32037.14.aps.54.4334
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