Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structure

Meng Zhi-Guo; Wu Chun-Ya; Li Juan; Xiong Shao-Zhen; Kwok Hoi S.; Man Wong

doi:10.7498/aps.54.3363

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Meng Zhi-Guo, Wu Chun-Ya, Li Juan, Xiong Shao-Zhen, Kwok Hoi S., Man Wong. Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structureJ. Acta Physica Sinica, 2005, 54(7): 3363-3369. DOI: 10.7498/aps.54.3363

Citation:

Meng Zhi-Guo, Wu Chun-Ya, Li Juan, Xiong Shao-Zhen, Kwok Hoi S., Man Wong. Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structureJ. Acta Physica Sinica, 2005, 54(7): 3363-3369. DOI: 10.7498/aps.54.3363

Citation:

Meng Zhi-Guo, Wu Chun-Ya, Li Juan, Xiong Shao-Zhen, Kwok Hoi S., Man Wong. Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structureJ. Acta Physica Sinica, 2005, 54(7): 3363-3369. DOI: 10.7498/aps.54.3363