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中国物理学会期刊
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Yang Hong-Guan, Shi Yi, Lü Jin, Pu Lin, Zhang Rong, Zheng You-Dou. Hole storage characteristics in Ge/Si hetero-nanocrystal-based memoriesJ. Acta Physica Sinica, 2004, 53(4): 1211-1216. DOI: 10.7498/aps.53.1211
Citation: Yang Hong-Guan, Shi Yi, Lü Jin, Pu Lin, Zhang Rong, Zheng You-Dou. Hole storage characteristics in Ge/Si hetero-nanocrystal-based memoriesJ. Acta Physica Sinica, 2004, 53(4): 1211-1216. DOI: 10.7498/aps.53.1211
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Hole storage characteristics in Ge/Si hetero-nanocrystal-based memories

Acta Phys. Sin., 2004, 53(4): 1211-1216.
DOI: 10.7498/aps.53.1211
CSTR: 32037.14.aps.53.1211
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