Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by  low pressure chemical vapor deposition

Peng Ying-Cai; M. Ikeda; S. Miyazaki

doi:10.7498/aps.52.3108

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Peng Ying-Cai, M. Ikeda, S. Miyazaki. Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor depositionJ. Acta Physica Sinica, 2003, 52(12): 3108-3113. DOI: 10.7498/aps.52.3108

Citation:

Peng Ying-Cai, M. Ikeda, S. Miyazaki. Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor depositionJ. Acta Physica Sinica, 2003, 52(12): 3108-3113. DOI: 10.7498/aps.52.3108

Citation:

Peng Ying-Cai, M. Ikeda, S. Miyazaki. Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor depositionJ. Acta Physica Sinica, 2003, 52(12): 3108-3113. DOI: 10.7498/aps.52.3108