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中国物理学会期刊
REN HONG-XIA, HAO YUE. STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFETJ. Acta Physica Sinica, 2000, 49(9): 1683-1688. DOI: 10.7498/aps.49.1683
Citation: REN HONG-XIA, HAO YUE. STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFETJ. Acta Physica Sinica, 2000, 49(9): 1683-1688. DOI: 10.7498/aps.49.1683

    STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFET

    CSTR: 32037.14.aps.49.1683
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