CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES

LU LI-WU; ZHANG YAN-HUA; YANG GUO-WEN; WANG ZHAN-GUO; J.WANG; Y.WANG; WEIKUN GE

doi:10.7498/aps.47.1339

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LU LI-WU, ZHANG YAN-HUA, YANG GUO-WEN, WANG ZHAN-GUO, J.WANG, Y.WANG, WEIKUN GE. CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUESJ. Acta Physica Sinica, 1998, 47(8): 1339-1345. DOI: 10.7498/aps.47.1339

Citation:

LU LI-WU, ZHANG YAN-HUA, YANG GUO-WEN, WANG ZHAN-GUO, J.WANG, Y.WANG, WEIKUN GE. CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUESJ. Acta Physica Sinica, 1998, 47(8): 1339-1345. DOI: 10.7498/aps.47.1339

Citation:

LU LI-WU, ZHANG YAN-HUA, YANG GUO-WEN, WANG ZHAN-GUO, J.WANG, Y.WANG, WEIKUN GE. CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUESJ. Acta Physica Sinica, 1998, 47(8): 1339-1345. DOI: 10.7498/aps.47.1339