YUAN JIAN, LU FANG, SUN HENG-HUI, WEI XING, YANG MIN, HUANG DA-MING, XU HONG-LAI, SHEN HONG-LIE, ZOU SHI-CHANG. STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALINGJ. Acta Physica Sinica, 1994, 43(7): 1137-1143. DOI: 10.7498/aps.43.1137
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Citation:
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YUAN JIAN, LU FANG, SUN HENG-HUI, WEI XING, YANG MIN, HUANG DA-MING, XU HONG-LAI, SHEN HONG-LIE, ZOU SHI-CHANG. STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALINGJ. Acta Physica Sinica, 1994, 43(7): 1137-1143. DOI: 10.7498/aps.43.1137
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YUAN JIAN, LU FANG, SUN HENG-HUI, WEI XING, YANG MIN, HUANG DA-MING, XU HONG-LAI, SHEN HONG-LIE, ZOU SHI-CHANG. STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALINGJ. Acta Physica Sinica, 1994, 43(7): 1137-1143. DOI: 10.7498/aps.43.1137
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Citation:
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YUAN JIAN, LU FANG, SUN HENG-HUI, WEI XING, YANG MIN, HUANG DA-MING, XU HONG-LAI, SHEN HONG-LIE, ZOU SHI-CHANG. STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALINGJ. Acta Physica Sinica, 1994, 43(7): 1137-1143. DOI: 10.7498/aps.43.1137
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