Search

x
中国物理学会期刊
Advanced Search
XIONG XING-MIN. INFLUENCE OF HYDROGEN AND TEMPERATURE ON POSITRON TRAPPING IN PROTON-IRRADIATED SILICONJ. Acta Physica Sinica, 1992, 41(1): 162-169. DOI: 10.7498/aps.41.162
Citation: XIONG XING-MIN. INFLUENCE OF HYDROGEN AND TEMPERATURE ON POSITRON TRAPPING IN PROTON-IRRADIATED SILICONJ. Acta Physica Sinica, 1992, 41(1): 162-169. DOI: 10.7498/aps.41.162
shu

INFLUENCE OF HYDROGEN AND TEMPERATURE ON POSITRON TRAPPING IN PROTON-IRRADIATED SILICON

Acta Phys. Sin., 1992, 41(1): 162-169.
DOI: 10.7498/aps.41.162
CSTR: 32037.14.aps.41.162
PDF
Get Citation

  • Abstract

    Authors and contacts

    References

Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return
    Baidu
    map