STUDY ON HIGH-FIELD ELECTRON TRAPPING AND DETRAPPING PROPERTY IN THIN SiOx Ny FILMS

YANG BING-LIANG; LIU BAI-YONG; Y. C. CHENG; H. WONG

doi:10.7498/aps.40.1855

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YANG BING-LIANG, LIU BAI-YONG, Y. C. CHENG, H. WONG. STUDY ON HIGH-FIELD ELECTRON TRAPPING AND DETRAPPING PROPERTY IN THIN SiOx Ny FILMSJ. Acta Physica Sinica, 1991, 40(11): 1855-1861. DOI: 10.7498/aps.40.1855

Citation:

YANG BING-LIANG, LIU BAI-YONG, Y. C. CHENG, H. WONG. STUDY ON HIGH-FIELD ELECTRON TRAPPING AND DETRAPPING PROPERTY IN THIN SiOx Ny FILMSJ. Acta Physica Sinica, 1991, 40(11): 1855-1861. DOI: 10.7498/aps.40.1855

Citation:

YANG BING-LIANG, LIU BAI-YONG, Y. C. CHENG, H. WONG. STUDY ON HIGH-FIELD ELECTRON TRAPPING AND DETRAPPING PROPERTY IN THIN SiOx Ny FILMSJ. Acta Physica Sinica, 1991, 40(11): 1855-1861. DOI: 10.7498/aps.40.1855