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中国物理学会期刊
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ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN. A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON SiJ. Acta Physica Sinica, 1991, 40(11): 1827-1832. DOI: 10.7498/aps.40.1827
Citation: ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN. A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON SiJ. Acta Physica Sinica, 1991, 40(11): 1827-1832. DOI: 10.7498/aps.40.1827
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A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si

Acta Phys. Sin., 1991, 40(11): 1827-1832.
DOI: 10.7498/aps.40.1827
CSTR: 32037.14.aps.40.1827
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