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中国物理学会期刊
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XUE FANG-SHI. TRANSFERRED ELECTRON EFFECT BETWEEN DIFFERENT ENERGY VALLEYS IN SEMICONDUCTOR HETEROSTRUCTUREJ. Acta Physica Sinica, 1990, 39(6): 142-150. DOI: 10.7498/aps.39.142
Citation: XUE FANG-SHI. TRANSFERRED ELECTRON EFFECT BETWEEN DIFFERENT ENERGY VALLEYS IN SEMICONDUCTOR HETEROSTRUCTUREJ. Acta Physica Sinica, 1990, 39(6): 142-150. DOI: 10.7498/aps.39.142
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TRANSFERRED ELECTRON EFFECT BETWEEN DIFFERENT ENERGY VALLEYS IN SEMICONDUCTOR HETEROSTRUCTURE

Acta Phys. Sin., 1990, 39(6): 142-150.
DOI: 10.7498/aps.39.142
CSTR: 32037.14.aps.39.142
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