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中国物理学会期刊
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WU WEN-HAO, HAN DA-XING. MEASUREMENT OF THE DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY INFRARED STIMULATED CURRENTSJ. Acta Physica Sinica, 1988, 37(6): 916-923. DOI: 10.7498/aps.37.916
Citation: WU WEN-HAO, HAN DA-XING. MEASUREMENT OF THE DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY INFRARED STIMULATED CURRENTSJ. Acta Physica Sinica, 1988, 37(6): 916-923. DOI: 10.7498/aps.37.916
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MEASUREMENT OF THE DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY INFRARED STIMULATED CURRENTS

Acta Phys. Sin., 1988, 37(6): 916-923.
DOI: 10.7498/aps.37.916
CSTR: 32037.14.aps.37.916
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