PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :N

ZHANG YONG; YU QI; ZHENG JIAN-SHENG; YAN BING-ZHANG; WU BO-XI; LI GUO-HUA; WANG ZHAO-PING; HAN HE-XIANG

doi:10.7498/aps.37.1925

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ZHANG YONG, YU QI, ZHENG JIAN-SHENG, YAN BING-ZHANG, WU BO-XI, LI GUO-HUA, WANG ZHAO-PING, HAN HE-XIANG. PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :NJ. Acta Physica Sinica, 1988, 37(12): 1925-1931. DOI: 10.7498/aps.37.1925

Citation:

ZHANG YONG, YU QI, ZHENG JIAN-SHENG, YAN BING-ZHANG, WU BO-XI, LI GUO-HUA, WANG ZHAO-PING, HAN HE-XIANG. PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :NJ. Acta Physica Sinica, 1988, 37(12): 1925-1931. DOI: 10.7498/aps.37.1925

Citation:

ZHANG YONG, YU QI, ZHENG JIAN-SHENG, YAN BING-ZHANG, WU BO-XI, LI GUO-HUA, WANG ZHAO-PING, HAN HE-XIANG. PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :NJ. Acta Physica Sinica, 1988, 37(12): 1925-1931. DOI: 10.7498/aps.37.1925