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中国物理学会期刊
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HE XING-FEI, MO DANG. MULTILAYER ANALYSIS OF DAMAGE PROFILE IN ION IMPLANTED SILICON BY OPTICAL SPECTROMETRYJ. Acta Physica Sinica, 1986, 35(12): 1567-1573. DOI: 10.7498/aps.35.1567
Citation: HE XING-FEI, MO DANG. MULTILAYER ANALYSIS OF DAMAGE PROFILE IN ION IMPLANTED SILICON BY OPTICAL SPECTROMETRYJ. Acta Physica Sinica, 1986, 35(12): 1567-1573. DOI: 10.7498/aps.35.1567
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MULTILAYER ANALYSIS OF DAMAGE PROFILE IN ION IMPLANTED SILICON BY OPTICAL SPECTROMETRY

Acta Phys. Sin., 1986, 35(12): 1567-1573.
DOI: 10.7498/aps.35.1567
CSTR: 32037.14.aps.35.1567
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