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Analysis of effect of bulk vacancy defect on secondary electron emission characteristics of Al2O3 [Acta Phys. Sin. 2024, 73(15): 157902]
Zhang Jian-Wei, Niu Ying, Yan Run-Qi, Zhang Rong-Qi, Cao Meng, Li Yong-Dong, Liu Chun-Liang, Zhang Jia-WeiActa Phys. Sin., 2024, 73(15): 157902. doi: 10.7498/aps.73.20240577
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图 4 Al2O3在无缺陷、存在O空位缺陷和Al空位缺陷时, 基于不同方向动量转移的电子非弹性平均自由程 (a) x方向; (b) y方向; (c) z方向
Figure 4. Inelastic mean free paths of electrons in Al2O3 in the ideal state, Al vacancy defect and O vacancy defect with momentum transfer in different direction: (a) x-direction; (b) y-direction; (c) z-direction.
图 5 Al2O3在无缺陷、O空位缺陷和Al空位缺陷情况下的弹性平均自由程
Figure 5. Elastic mean free paths of electrons in Al2O3 under conditions of ideal state, Al vacancy defect and O vacancy defect.
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