Valley Hall effect induced by pseudomagnetic field in distorted photonic graphene

Deng Fu-Sheng; Sun Yong; Liu Yan-Hong; Dong Li-Juan; Shi Yun-Long

doi:10.7498/aps.66.144204

Abstract

Like the spin in spintronics, the valley index in graphene can be viewed as a new carrier of information, which is useful for designing modern electronic devices. Recently, we have applied the concept of valleytronics to photonic graphene, revealed valley-dependent beam splitting effect and realized pseudomagnetic field. The pseudomagnetic field enables a novel manipulation of photons. In this paper, the photonic analogy of valley Hall effect in uniaxially distorted photonic graphene is investigated. It is found that photons in two valleys are subjected to pseudomagnetic fields that are equal in strength but opposite in sign. With the increasing of distortion, the valley Hall effect becomes stronger. In addition, it is found that the photonic valley Hall effect can still be maintained under the influence of loss, although the beam intensity decreases. The photonic analogy of valley Hall effect induced by pseudomagnetic field in uniaxially distorted photonic graphene may be very useful for controlling the flow of light in future valley-polarized devices.

Keywords:

Authors and contacts

1.
Institute of Solid State Physics, Shanxi Datong University, Datong 037009, China;
2.
Shanxi Provincial Key Laboratory of Microstructure Electromagnetic Functional Materials, Shanxi Datong University, Datong 037009, China;
3.
Key Laboratory of New Microstructure Function Materials in Shanxi Province, Shanxi Datong University, Datong 037009, China;
4.
Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Tongji University, Shanghai 200092, China

Corresponding author: Deng Fu-Sheng, dengfusheng2005@163.com

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11604186, 11674247, 11504211), the Natural Science Foundation of Shanxi Province, China (Grant No. 201601D202011), the Science and Technology Project of Shanxi Province, China (Grant No. 2015031002-2), and the Science and Technology Project of Datong, Shanxi Province, China (Grant Nos. 2016021, 2015015, 201308).

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Cited By

[1]	Neto A C, Guinea F, Peres N M, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[2]	Xiao D, Yao W, Niu Q 2007 Phys. Rev. Lett. 99 236809
[3]	Mak K F, McGill K L, Park J, McEuen P L 2014 Science 344 1489
[4]	Zhang L, Niu Q 2015 Phys. Rev. Lett. 115 115502
[5]	Lu J, Qiu C, Ke M, Liu Z 2016 Phys. Rev. Lett. 116 093901
[6]	Ju L, Shi Z, Nair N, Lv Y, Jin C, Velasco J Jr, Ojeda-Aristizabal C, Analytis J, Wang F 2015 Nature 520 650
[7]	Li J, Wang K, McFaul K J, Zern Z, Ren Y, Watanabe K, Taniguchi T, Qiao Z, Zhu J 2016 Nature Nano. 11 1060
[8]	Yin L J, Jiang H, Qiao J B, He L 2016 Nature Commun. 7 11760
[9]	Lu J, Qiu C, Ye L, Fan X, Ke M, Zhang F, Liu Z 2017 Nat. Phys. 13 369
[10]	Ken-ichi S, Yoshiyuki K, Riichiro P S 2005 Theor. Phys. 113 63
[11]	Guinea F, Katsnelson M I, Geim A K 2010 Nat. Phys. 6 30
[12]	Levy N, Burke S A, Meaker K L, Panlasigui M, Zettl A, Guinea F, Castro Neto A H, Crommie M F 2010 Science 329 544
[13]	Wu Z, Zhai F, Peeters F M, Xu H Q, Chang K 2011 Phys. Rev. Lett. 106 176802
[14]	Jiang Y, Low T, Chang K, Katsnelson M I, Guinea F 2013 Phys. Rev. Lett. 110 046601
[15]	Zhang D, Seifert G, Chang K 2014 Phys. Rev. Lett. 112 096805
[16]	Guinea F, Geim A K, Katsnelson M I, Novoselov K S 2010 Phys. Rev. B 81 035408
[17]	Low T, Guinea F 2010 Nano Lett. 10 3551
[18]	Zandbergen S R, de Dood M J A 2010 Phys. Rev. Lett. 104 043903
[19]	Plotnik Y, Rechtsman M C, Song D, Heinrich M, Zeuner J M, Nolte S, Lumer Y, Malkova N, Xu J, Szameit A, Chen Z, Segev M 2013 Nat. Mater. 13 57
[20]	Rechtsman M C, Plotnik Y, Zeuner J M, Song D, Chen Z, Szameit A, Segev M 2013 Phys. Rev. Lett. 111 103901
[21]	Zeuner J M, Rechtsman M C, Nolte S, Szameit A 2014 Opt. Lett. 39 602
[22]	Crespi A, Corrielli G, Valle G D, Osellame R, Longhi S 2013 New J. Phys. 15 013012
[23]	Wang X, Jiang H T, Yan C, Sun Y, Li Y H, Shi Y L, Chen H 2013 Europhys. Lett. 103 17003
[24]	Rechtsman M C, Zeuner J M, Tnnermann A, Nolte S, Segev M, Szameit A 2013 Nat. Photon. 7 153
[25]	Schomerus H, Halpern N Y 2013 Phys. Rev. Lett. 110 013903
[26]	Deng F S, Sun Y, Wang X, Xue R, Li Y, Jiang H T, Shi Y L, Chang K, Chen H 2014 Opt. Express 22 23605
[27]	Deng F, Sun Y, Dong L, Liu Y, Shi Y 2017 J. Appl. Phys. 121 074501
[28]	Deng F S, Li Y M, Sun Y, Wang X, Guo Z W, Jiang H T, Shi Y L, Chang K, Chen H 2015 Opt. Lett. 40 3380
[29]	Albert J P, Jouanin C, Cassagne D, Monge D 2002 Opt. Quant. Electron. 34 251
[30]	Wolff C, Mack P, Busch K 2013 Phys. Rev. B 88 075201
[31]	Garcia-Pomar J L, Cortijo A, Nieto-Vesperinas M 2008 Phys. Rev. Lett. 100 236801

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Vol. 66, Issue 14 - 2017-07-20

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