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Directional cracking in Ti,C:sapphire crystals grown along [1120] by Vertical Bridgman method often occurs in the cutting and processing process. In this work, we discuss the characteristic and mechanism of directional cracking of Ti,C:sapphire, and find that directional cracking originates from (1100) lattice plane and spreads along [0001] orientation. Through the Crystalmaker Simulation software, we find that atomic arrangement on (1100) lattice plane is the most sparse and adjacent atomic spacing is the largest along vertical [0001] direction, so in the system (1100) [0001] of lattice has a minimum cracking strength. Irregular carbon inclusions in the cracked Ti,C:sapphire are observed with optical microscopy, scanning electron microscopy (SEM), and X-ray diffractometry. These inclusions cause great internal stress in the cooling process due to thermal expansion mismatch and cracking originating from and spreading in the weak system (1100) [0001] of lattice. As a consequence, macroscopic directional cracking is observed in the Ti,C:sapphire. The study has important theoretical and practical significance for growing high-quality Ti,C:sapphire crystal.
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Keywords:
- Ti /
- C:apphire crystal /
- carbon inclusion
[1] Moulton P F 1986 Opt. Soc. Am. B 3 125
[2] Seres J, Moeller A, Seres E, O'Keeffe K, Lenner M 2003 Opt. Lett. 28 19
[3] Wang Buguo, Bliss David F, Callahan Michael J 2009 J. Crystal Growth 311 443
[4] Yang Q H, Zeng Z J, Xu J, Su L B 2006 Acta. Phys. Sin. 55 2726 (in Chinese) [杨秋红, 曾智江, 徐军, 苏良碧 2006 55 2726]
[5] Halliburton L, Scripsic M 1986 Lasers Nonlinear Opt. Mater. SPIE Proc. 681 109
[6] Aggarwal R L, Sanchez A, Stuppi M M, Fahey R E, Strauss A J, Rapoport M R, Khattak C P 1988 J. Quantum Electronics 24 1003
[7] Rapoport W R, Khattak C P 1988 Appl. Opt. 27 2677
[8] Nehari Abdeldjelil, Brenier Alain, Panzer Gerard 2011 Crystal Growth and Design 11 445
[9] Khattak C P, ScovilleA N 1986 Laser and Nonlinear Optical Materials Proc. Of SPIE 681 58
[10] David B Joyce, Frederick Schmid 2010 J. Crystal Growth 312 1138
[11] Nizhankovskiy S V, Dan'ko Y A, Krivonosov E V, Puzikov V M 2010 Inorganic Materials 46 35
[12] Kokta M R Patent EP 0241614(B1)[1990-10-1]
[13] Guan Z D, Zhang Z T, Jiao J S 1992 Physical Properties of Inorganic Materials (Beijing: Tsinghua University Press) p41 (in Chinese) [关振铎, 张中太, 焦金生 1992 无机材料物理性能 第1版 (北京: 清华大学出版社) 第41页]
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[1] Moulton P F 1986 Opt. Soc. Am. B 3 125
[2] Seres J, Moeller A, Seres E, O'Keeffe K, Lenner M 2003 Opt. Lett. 28 19
[3] Wang Buguo, Bliss David F, Callahan Michael J 2009 J. Crystal Growth 311 443
[4] Yang Q H, Zeng Z J, Xu J, Su L B 2006 Acta. Phys. Sin. 55 2726 (in Chinese) [杨秋红, 曾智江, 徐军, 苏良碧 2006 55 2726]
[5] Halliburton L, Scripsic M 1986 Lasers Nonlinear Opt. Mater. SPIE Proc. 681 109
[6] Aggarwal R L, Sanchez A, Stuppi M M, Fahey R E, Strauss A J, Rapoport M R, Khattak C P 1988 J. Quantum Electronics 24 1003
[7] Rapoport W R, Khattak C P 1988 Appl. Opt. 27 2677
[8] Nehari Abdeldjelil, Brenier Alain, Panzer Gerard 2011 Crystal Growth and Design 11 445
[9] Khattak C P, ScovilleA N 1986 Laser and Nonlinear Optical Materials Proc. Of SPIE 681 58
[10] David B Joyce, Frederick Schmid 2010 J. Crystal Growth 312 1138
[11] Nizhankovskiy S V, Dan'ko Y A, Krivonosov E V, Puzikov V M 2010 Inorganic Materials 46 35
[12] Kokta M R Patent EP 0241614(B1)[1990-10-1]
[13] Guan Z D, Zhang Z T, Jiao J S 1992 Physical Properties of Inorganic Materials (Beijing: Tsinghua University Press) p41 (in Chinese) [关振铎, 张中太, 焦金生 1992 无机材料物理性能 第1版 (北京: 清华大学出版社) 第41页]
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