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Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation

Wang Zu-Jun Tang Ben-Qi Xiao Zhi-Gang Liu Min-Bo Huang Shao-Yan Zhang Yong

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Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation

Wang Zu-Jun, Tang Ben-Qi, Xiao Zhi-Gang, Liu Min-Bo, Huang Shao-Yan, Zhang Yong
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  • The experiments on charge coupled devices (CCD) irradiated by protons were carried out. The charge transfer efficiency (CTE) of CCD was measured before and after proton radiation. The radiation damage mechanism of CTE degradation was analyzed. The CTE degradation induced by irradiation of protons of different energies was compared. The experimental results were explained by the theoretical analysis based on the calculation by radiation particle transport simulation software.
    [1]

    [1] Hopkinson G R 2000 IEEE Trans. Nucl. Sci. 47 2460

    [2]

    [2] Waczynski A, Elizabeth J P, Marshall P W, Reed R A, Johnson S D, Hill R J, Delo G S, Wassell E J, Cheng E S 2001 IEEE Trans. Nucl. Sci. 48 1807

    [3]

    [3] Holmes S A, Holland A, Watts S 1996 IEEE Trans. Nucl. Sci. 43 2998

    [4]

    [4] Hardy T, Murowinski R, Deen M J 1998 IEEE Trans. Nucl. Sci. 45 154

    [5]

    [5] Hopkinson G R 2003 IEEE Trans. Nucl. Sci. 50 1960

    [6]

    [6] Zhao H J, He S Y, Sun Y Z, Sun Q, Xiao Z B, Lü W, Huang C Y,Xiao J D, Wu Y Y 2009 Acta Phys. Sin. 58 404 (in Chinese) [赵慧杰、何世禹、孙彦铮、孙强、肖志斌、吕伟、黄才勇、肖景东、吴宜勇 2009 58 404]

    [7]

    [7] He C H, Geng B, Yang H L, Chen X H, Li G Z, Wang Y P 2003 Acta Phys. Sin. 52 2235 (in Chinese) [贺朝会、耿斌、杨海亮、陈晓华、李国政、王燕萍 2003 52 2235]

    [8]

    [8] Song Q 2002 Ph. D. Dissertation (Beijing: Graduate University of Chinese Academy of Sciences) (in Chinese) [宋谦 2002 博士学位论文 (北京:中国科学院研究生院)]

    [9]

    [9] Yu Q K, Tang M, Zhu H J, Zhang H M, Zhang Y W, Sun J X 2008 Spacecr. Envir. Eng. 25 391 (in Chinese) [于庆奎、唐民、朱恒静、张海明、张延伟、孙吉兴 2008 航天器环境工程 25 391]

    [10]

    ] Zhou Y S, Liu Y F, Bai T Z 1997 Electro-Optical Image Formation Principle (Beijing: Beijing Institute of Technology Press) p291 (in Chinese) [邹异松、刘玉凤、白廷柱 1997 光电成像原理 (北京:北京理工大学出版社) 第291页]

    [11]

    ] Xiao Z G, Tang B Q, Li J L, Zhang Y, Liu M B, Wang Z J, Huang S Y 2007 At. Ener. Sci. Techn. 41 117 (in Chinese) [肖志刚、唐本奇、李君利、张勇、刘敏波、王祖军、黄绍艳 2007 原子能科学技术 41 117]

    [12]

    ] Cao J Z 1993 Radiation Effects on Semiconductor Materials (Beijing: Science Press) pp144,145 (in Chinese)[曹建中 1993 半导体材料的辐射效应 (北京:科学出版社)第144,145页]

    [13]

    ] Dale C, Marshal P, Cummings B, Shamey L, Holland A 1993 IEEE Trans. Nucl. Sci. 40 1628

    [14]

    ] Hopkins I H, Hopkinson G R, Johlander B 1994 IEEE Trans. Nucl. Sci. 41 1984

    [15]

    ] Hopkinson G R 1996 IEEE Trans. Nucl. Sci. 43 614

    [16]

    ] Insoo J, Michael A 2003 IEEE Trans. Nucl. Sci. 50 1924

  • [1]

    [1] Hopkinson G R 2000 IEEE Trans. Nucl. Sci. 47 2460

    [2]

    [2] Waczynski A, Elizabeth J P, Marshall P W, Reed R A, Johnson S D, Hill R J, Delo G S, Wassell E J, Cheng E S 2001 IEEE Trans. Nucl. Sci. 48 1807

    [3]

    [3] Holmes S A, Holland A, Watts S 1996 IEEE Trans. Nucl. Sci. 43 2998

    [4]

    [4] Hardy T, Murowinski R, Deen M J 1998 IEEE Trans. Nucl. Sci. 45 154

    [5]

    [5] Hopkinson G R 2003 IEEE Trans. Nucl. Sci. 50 1960

    [6]

    [6] Zhao H J, He S Y, Sun Y Z, Sun Q, Xiao Z B, Lü W, Huang C Y,Xiao J D, Wu Y Y 2009 Acta Phys. Sin. 58 404 (in Chinese) [赵慧杰、何世禹、孙彦铮、孙强、肖志斌、吕伟、黄才勇、肖景东、吴宜勇 2009 58 404]

    [7]

    [7] He C H, Geng B, Yang H L, Chen X H, Li G Z, Wang Y P 2003 Acta Phys. Sin. 52 2235 (in Chinese) [贺朝会、耿斌、杨海亮、陈晓华、李国政、王燕萍 2003 52 2235]

    [8]

    [8] Song Q 2002 Ph. D. Dissertation (Beijing: Graduate University of Chinese Academy of Sciences) (in Chinese) [宋谦 2002 博士学位论文 (北京:中国科学院研究生院)]

    [9]

    [9] Yu Q K, Tang M, Zhu H J, Zhang H M, Zhang Y W, Sun J X 2008 Spacecr. Envir. Eng. 25 391 (in Chinese) [于庆奎、唐民、朱恒静、张海明、张延伟、孙吉兴 2008 航天器环境工程 25 391]

    [10]

    ] Zhou Y S, Liu Y F, Bai T Z 1997 Electro-Optical Image Formation Principle (Beijing: Beijing Institute of Technology Press) p291 (in Chinese) [邹异松、刘玉凤、白廷柱 1997 光电成像原理 (北京:北京理工大学出版社) 第291页]

    [11]

    ] Xiao Z G, Tang B Q, Li J L, Zhang Y, Liu M B, Wang Z J, Huang S Y 2007 At. Ener. Sci. Techn. 41 117 (in Chinese) [肖志刚、唐本奇、李君利、张勇、刘敏波、王祖军、黄绍艳 2007 原子能科学技术 41 117]

    [12]

    ] Cao J Z 1993 Radiation Effects on Semiconductor Materials (Beijing: Science Press) pp144,145 (in Chinese)[曹建中 1993 半导体材料的辐射效应 (北京:科学出版社)第144,145页]

    [13]

    ] Dale C, Marshal P, Cummings B, Shamey L, Holland A 1993 IEEE Trans. Nucl. Sci. 40 1628

    [14]

    ] Hopkins I H, Hopkinson G R, Johlander B 1994 IEEE Trans. Nucl. Sci. 41 1984

    [15]

    ] Hopkinson G R 1996 IEEE Trans. Nucl. Sci. 43 614

    [16]

    ] Insoo J, Michael A 2003 IEEE Trans. Nucl. Sci. 50 1924

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Publishing process
  • Received Date:  17 September 2009
  • Accepted Date:  10 December 2009
  • Published Online:  05 March 2010

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