基于湿法腐蚀凹槽阳极的低漏电高耐压AlGaN/GaN肖特基二极管

武鹏; 朱宏宇; 吴金星; 张涛; 张进成; 郝跃

doi:10.7498/aps.72.20230709

摘要

得益于铝镓氮/氮化镓异质结材料较大的禁带宽度、较高的击穿场强以及异质界面存在的高面密度及高迁移率的二维电子气, 基于该异质结材料的器件在高压大功率及微波射频方面具有良好的应用前景, 尤其是随着大尺寸硅基氮化镓材料外延技术的逐渐成熟, 低成本的氮化镓器件在消费电子方面也展现出极大的优势. 为了提高铝镓氮/氮化镓肖特基二极管的整流效率, 通常要求器件具有较小的开启电压、较低的反向漏电和较高的击穿电压, 采用低功函数金属阳极结构能有效降低器件开启电压, 但较低的阳极势垒高度使器件易受界面缺陷的影响, 导致器件反向漏电增大. 本文采用一种新型的基于热氧氧化及氢氧化钾腐蚀的低损伤阳极凹槽制备技术, 解决了常规干法刻蚀引入的表面等离子体损伤难题, 使凹槽表面粗糙度由0.57 nm降低至0.23 nm, 器件阳极反向偏置为–1 kV时的漏电流密度由1.5 × 10^–6 A/mm降低至2.6 × 10^–7 A/mm, 另外, 由于热KOH溶液对热氧氧化后的AlGaN势垒层及GaN沟道层具有良好的腐蚀选择比, 因此避免了干法刻蚀腔体中由于等离子体分布不均匀导致的边缘刻蚀尖峰问题, 使器件反向耐压由–1.28 kV提升至–1.73 kV, 器件性能得到极大提升.

关键词:

Abstract

AlGaN/GaN heterojunction epitaxies with wide bandgap, high critical electric field as well as high density and high mobility two-dimensional electron gas have shown great potential applications in the next-generation high-power and high-frequency devices. Especially, with the development of Si-based GaN epitaxial technique with big size, GaN devices with low cost also show great advantage in consumer electronics. In order to improve the rectification efficiency of AlGaN/GaN Schottky barrier diode (SBD), low leakage current and low turn-on voltage are important. The GaN Schottky barrier diode with low work-function metal as anode is found to be very effective to reduce turn-on voltage. However, the low Schottky barrier height makes the Schottky interface sensitive to damage to groove surface, which leads to a high leakage current. In this work, a novel wet-etching technique with thermal oxygen oxidation and KOH corrosion is used to prepare the anode groove, and the surface roughness of groove decreases from 0.57 to 0.23 nm, compared with that of the dry-etching surface of groove. Meanwhile, the leakage current is suppressed from 1.5 × 10^–6 to 2.6 × 10^–7 A/mm. Benefiting from the great corrosion selectively of hot KOH solution to AlGaN barrier layer and GaN channel layer after thermal oxygen oxidation, the spikes of the edge of groove region caused by the nonuniform distribution of plasma in the cavity is improved, and the breakdown voltage of the fabricated AlGaN/GaN SBDs is raised from –1.28 to –1.73 kV.

Keywords:

作者及机构信息

1.
西安电子科技大学, 宽禁带半导体器件与集成电路全国重点实验室, 西安　710071

2.
中国飞行试验研究院, 西安　710089

通信作者: 张涛, zhangtao@xidian.edu.cn ; 张进成, jchzhang@xidian.edu.cn ;

基金项目: 国家自然科学基金(批准号: 62104185)、国家杰出青年科学基金(批准号: 61925404)、中央高校基本科研业务费(批准号: QTZX23076)和青年人才托举工程(批准号: 2022QNRC001)资助的课题.

Authors and contacts

1.
National Key Laboratory of Wide Band Gap Semiconductor Devices and Integrated Technology, Xidian University, Xi’an 710071, China

2.
Chinese Flight Test Establishment, Xi’an 710089, China

Corresponding author: Zhang Tao, zhangtao@xidian.edu.cn ; Zhang Jin-Cheng, jchzhang@xidian.edu.cn ;

Funds: Project supported by the Natural Science Foundation of China (Grant No. 62104185), the National Science Fund for Distinguished Young Scholars (Grant No. 61925404), the Fundamental Research Funds for the Central Universities (Grant No. QTZX23076), and the Young Elite Scientists Sponsorship Program by China Association for Science and Technology (Grant No. 2022QNRC001).

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参考文献

[1]	Otake H, Chikamatsu K, Yamaguchi A, Fujishima T, Ohta H 2008 Appl. Phys. Express 1 011105 Google Scholar
[2]	Guo Z B, Hitchcock C, Wetzel C, Karlicek R F, Jr, Piao G X, Yano Y, Koseki S, Tabuchi T, Matsumoto K, Bulsara M, Chow T P 2019 IEEE Electr. Device L. 40 1736 Google Scholar
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施引文献

图 1 凹槽阳极结构低功函数阳极金属AlGaN/GaN SBD器件截面图

Fig. 1. Cross-sectional schematic view of AlGaN/GaN SBD with groove anode and low work-function metal as anode.

下载: 全尺寸图片幻灯片

图 2 (a)湿法腐蚀和(b)干法刻蚀阳极凹槽深度及凹槽底部表面形貌

Fig. 2. Depth of groove anode and roughness of the bottom surface fabricated by (a) wet etching and (b) dry etching.

下载: 全尺寸图片幻灯片

图 3 基于湿法腐蚀凹槽制备技术的AlGaN/GaN SBD阳极凹槽边缘的(a)透射电子显微镜切面图和(b)EDS元素分析

Fig. 3. (a) Transmission electron microscopy and (b) EDX analysis around the anode edge of the AlGaN/GaN SBD fabricated by wet-etching technique.

下载: 全尺寸图片幻灯片

图 4 (a)湿法腐蚀和(b)干法刻蚀阳极凹槽表面F 1s核级谱

Fig. 4. F 1s core-level spectra of the bottom surface fabricated by (a) wet etching and (b) dry etching.

下载: 全尺寸图片幻灯片

图 5 线性坐标下器件正向导通特性

Fig. 5. Forward I-V characteristics of the fabricated AlGaN/GaN SBDs in linear-scale.

下载: 全尺寸图片幻灯片

图 6 半对数坐标下器件反向击穿特性

Fig. 6. Reverse I-V curves of the fabricated AlGaN/GaN SBDs in semi-log scale.

下载: 全尺寸图片幻灯片

图 7 湿法腐蚀凹槽表面Ga 3d核级谱

Fig. 7. Ga 3d core-level spectra of the bottom surface fabricated by wet etching.

下载: 全尺寸图片幻灯片

map

[1]	Otake H, Chikamatsu K, Yamaguchi A, Fujishima T, Ohta H 2008 Appl. Phys. Express 1 011105 Google Scholar
[2]	Guo Z B, Hitchcock C, Wetzel C, Karlicek R F, Jr, Piao G X, Yano Y, Koseki S, Tabuchi T, Matsumoto K, Bulsara M, Chow T P 2019 IEEE Electr. Device L. 40 1736 Google Scholar
[3]	Liu L, Wang J, Wang H Y, Ren N, Guo Q, Sheng K 2022 IEEE Electr. Device L. 43 104 Google Scholar
[4]	陈睿, 梁亚楠, 韩建伟, 王璇, 杨涵, 陈钱, 袁润杰, 马英起, 上官士鹏 2021 70 116102 Rui C, Liang Y N, Han J W, Wang X, Yang H, Chen Q, Yuan R J, Ma Y Q, Shangguan S P 2021 Acta Phys. Sin. 70 116102
[5]	Hu J, Stoffels S, Zhao M, Tallarico A N, Rossetto I, Meneghini M, Kang X W, Bakeroot B, Marcon D, Kaczer B, Decoutere S, Groeseneken G 2017 IEEE Electron Dev. Lett. 38 371 Google Scholar
[6]	Xu W Z, Zhou F, Liu Q, Ren F F, Zhou D, Chen D J, Zhang R, Zheng Y D, Lu H 2021 IEEE Electron Dev. Lett. 42 1743 Google Scholar
[7]	Li X D, Geens K, Guo W M, You S Z, Zhao M, Fahle D, Odnoblyudov V, Groeseneken G, Decoutere S 2019 IEEE Electron Dev. Lett. 40 1499 Google Scholar
[8]	Nela L, Kampitsis G, Ma J, Matioli E 2020 IEEE Electron Dev. Lett. 41 99 Google Scholar
[9]	Zhu M D, Song B, Qi M, Hu Z Y, Nomoto K, Yan X D, Cao Y, Johnson W, Kohn E, Jena D, Xing H L G 2015 IEEE Electron Dev. Lett. 36 375 Google Scholar
[10]	Liu C, Khadar R A, Matioli E 2018 IEEE Electron Dev. Lett. 39 71 Google Scholar
[11]	Zhang Y H, Sun M, Wong H Y, Lin Y X, Srivastava P, Hatem C, Azize M, Piedra D, Yu L L, Sumitomo T, Braga N D A, Mickevicius R V, Palacios T 2015 IEEE Trans. Electron Dev. 62 2155 Google Scholar
[12]	Zhang T, Zhang J C, Zhou H, Wang Y, Chen T S, Zhang K, Zhang Y C, Dang K, Bian Z K, Zhang J F, Xu S R, Duan X L, Ning J, Hao Y 2019 IEEE Electron Dev. Lett. 40 1583 Google Scholar
[13]	Zhang T, Wang Y, Zhang Y N, Lv Y G, Ning J, Zhang Y C, Zhou H, Duan X L, Zhang J C, Hao Y 2021 IEEE Trans. Electron Dev. 68 2661 Google Scholar
[14]	武鹏, 张涛, 张进成, 郝跃 2022 158503 Wu P, Zhang T, Zhang J C, Hao Y 2022 Acta Phys. Sin. 158503
[15]	Tsou C W, Wei K P, Lian Y W, Hsu S S H 2016 IEEE Electron Dev. Lett. 37 70 Google Scholar
[16]	Xu R, Chen P, Liu M H, Zhou J, Li Y M, Cheng K, Liu B, Chen D J, Xie Z L, Zhang R, Zheng Y D 2021 IEEE Electron Dev. Lett. 42 208 Google Scholar
[17]	Zhou Q, Jin Y, Shi Y Y, Mou J Y, Bao X, Chen B W, Zhang B 2015 IEEE Electron Dev. Lett. 36 660 Google Scholar
[18]	Gao J N, Wang M J, Yin R Y, Liu S F, Wen C P, Wang J Y, Wu W G, Hao Y L, Jin Y F, Shen B 2017 IEEE Electron Dev. Lett. 38 1425 Google Scholar
[19]	Hu J, Stoffels S, Lenci S, Bakeroot B, Jaeger B D, Hove M V, Ronchi N, Venegas R, Liang H, Zhao M, Groeseneken G, Decoutere S 2016 IEEE Trans. Electron Dev. 63 997 Google Scholar
[20]	Lei J C, Wei J, Tang G F, Zhang Z F, Qian Q K, Zheng Z Y, Hua M Y, Chen K J 2018 IEEE Electron Dev. Lett. 39 260 Google Scholar
[21]	Ma J, Matioli E 2017 IEEE Electron Dev. Lett. 38 83 Google Scholar
[22]	Ma J, Matioli E 2018 Appl. Phys. Lett. 112 052101 Google Scholar
[23]	Xu Z, Wang J Y, Liu Y, Cai J B, Liu J Q, Wang M J, Yu M, Xie B, Wu W G, Ma X H, Zhang J C 2013 IEEE Electron Dev. Lett. 34 7
[24]	Wang Y, Wang M J, Xie B, Wen C P, Wang J Y, Hao Y L, Wu W G, Chen K J, Shen B 2013 IEEE Electron Dev. Lett. 34 11
[25]	Xu Z, Wang J Y, Liu J Q, Jin C Y, Cai Y, Yang Z C, Wang M J, Yu M, Xie B, Wu W G, Ma X H, Zhang J C, Hao Y 2014 IEEE Electron Dev. Lett. 35 12 Google Scholar
[26]	Carin R, Deville J P, Werckmann J 1990 Sur. Interface Anal. 16 65 Google Scholar
[27]	Bian Z K, Zhang J C, Zhao S L, Zhang Y C, Duan X L, Chen J B, Ning J, Hao Y 2020 IEEE Electron Dev. Lett. 41 10

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基于湿法腐蚀凹槽阳极的低漏电高耐压AlGaN/GaN肖特基二极管